Manufacturer Part #
SIHD6N62E-GE3
E Series N Channel 620 V 900 mΩ 34 nC Surface Mount Power Mosfet - DPAK
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SIHD6N62E-GE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/02/2025 Details and Download
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
Active
Active
Vishay SIHD6N62E-GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 620V |
| Drain-Source On Resistance-Max: | 900mΩ |
| Rated Power Dissipation: | 78|W |
| Qg Gate Charge: | 17nC |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
3,000
$0.69
6,000
$0.68
9,000+
$0.675
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount