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Manufacturer Part #

SIR606DP-T1-GE3

N-Channel 100 V 16.2 mOhm 44.5 W TrenchFET Power Mosfet - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIR606DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 16.2mΩ
Rated Power Dissipation: 5W
Qg Gate Charge: 24.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12.4A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 20ns
Rise Time: 19ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.6V
Input Capacitance: 1360pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
6,000
Factory Lead Time:
29 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,840.00
USD
Quantity
Unit Price
3,000
$0.65
6,000
$0.64
9,000
$0.635
12,000+
$0.63
Product Variant Information section