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Vishay | SISS27ADN-T1-GE3

Manufacturer Part #

SISS27ADN-T1-GE3

P-Channel 30 V 5.1 mOhm 57 W TrenchFET Gen III Mosfet - PowerPAK 1212-8S

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2612
Product Specification Section
Vishay SISS27ADN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 5.1mΩ
Rated Power Dissipation: 57W
Qg Gate Charge: 77.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 48ns
Turn-off Delay Time: 38ns
Rise Time: 35ns
Fall Time: 22ns
Operating Temp Range: -55°C to +150°C
Input Capacitance: 4660pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,845.00
USD
Quantity
Unit Price
3,000
$0.615
6,000
$0.61
9,000
$0.605
12,000+
$0.60
Product Variant Information section