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Référence fabricant
SQJ402EP-T1_GE3
SQJ402EP Series 100 V 32 A SMT Automotive N-Channel Mosfet - PowerPAK® SO-8L
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2417 | ||||||||||
Vishay SQJ402EP-T1_GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: As part of Vishay Siliconix commitment to Quality, we would like to extend to you a courtesy advisory notification of a datasheet revision for SQJ402EP (Doc #67997 Rev D attached). There is no change to the materials or processes used in the manufacture of this part.The changes per this Advisory reflect updates as follows:Typo correction on pages 1, 2, and 4 of datasheet.Page1: Removed superscript “d” from Feature “AEC-Q101 Qualified”; superscript “b” from “Maximum Power Dissipation”; and note “d.Parametric verification ongoing”. Page2: Renamed superscript “e, f” to “d, e”; notes “e, f” to “d, e”; and notes “g, h, i” to a, b, c”. Page4:Corrected Tj labels of On?Resistance vs Gate-to-Source Voltage chart that got swapped.This advisory is for information only and there is no need for a response.Reason for Change:Datasheet Revision
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQJ402EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/sqj402ep-t1-ge3-vishay-8075847
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQJ402EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/sqj402ep-t1-ge3-vishay-8075847
Vishay SQJ402EP-T1_GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.011Ω |
| Rated Power Dissipation: | 83|W |
| Qg Gate Charge: | 34nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 32A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 27ns |
| Rise Time: | 10ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Technology: | PowerTrench |
| Input Capacitance: | 1829pF |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount