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STMicroelectronics | STB11NM60T4

Manufacturer Part #

STB11NM60T4

N-Channel 600 V 450 mOhm 160 W Surface Mount MDmesh™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB11NM60T4 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 450mΩ
Rated Power Dissipation: 160|W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 11A
Turn-on Delay Time: 20ns
Rise Time: 20ns
Fall Time: 11ns
Operating Temp Range: -65°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Height - Max: 4.6mm
Length: 10.4mm
Input Capacitance: 1000pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,310.00
USD
Quantity
Unit Price
1,000
$2.31
2,000
$2.29
3,000+
$2.27
Product Variant Information section