Manufacturer Part #
STB11NM80T4
N-Channel 800 V 35 mΩ 150 W Surface Mount Power MosFet - D2PAK
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2516 | ||||||||||
Product Specification Section
STMicroelectronics STB11NM80T4 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STB11NM80T4 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 800V |
| Drain-Source On Resistance-Max: | 0.4Ω |
| Rated Power Dissipation: | 150|W |
| Qg Gate Charge: | 43.6nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The STB11NM80T4 is a MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance.
The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Faetures:
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
Application:
- Switching applications
Pricing Section
Global Stock:
1,000
USA:
1,000
Factory Lead Time:
14 Weeks
Quantity
Unit Price
1,000+
$4.01
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount