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STMicroelectronics | STB13NM60N

Manufacturer Part #

STB13NM60N

N-Channel 650 V 0.38 Ω Surface Mount MDmesh II Power MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB13NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.36Ω
Rated Power Dissipation: 90|W
Qg Gate Charge: 30nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB13NM60N is a N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,680.00
USD
Quantity
Unit Price
1,000
$2.68
2,000
$2.66
3,000+
$2.64
Product Variant Information section