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STMicroelectronics | STB32NM50N

Manufacturer Part #

STB32NM50N

N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB32NM50N - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.13Ω
Rated Power Dissipation: 190W
Qg Gate Charge: 62.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 22A
Turn-on Delay Time: 21.5ns
Turn-off Delay Time: 110ns
Rise Time: 9.5ns
Fall Time: 23.6ns
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 1973pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,190.00
USD
Quantity
Unit Price
1
$2.40
10
$2.33
40
$2.29
150
$2.24
500+
$2.19
Product Variant Information section