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Manufacturer Part #

STB34N65M5

N-Channel 650 V 0.11 Ohm Surface Mount MDmesh™ V Power Mosfet - D2PAK

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 190W
Qg Gate Charge: 62.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 28A
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 2700pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Total
$2,420.00
USD
Quantity
Web Price
1,000+
$2.42
Product Variant Information section