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STMicroelectronics | STB34N65M5

Manufacturer Part #

STB34N65M5

N-Channel 650 V 0.11 Ohm Surface Mount MDmesh™ V Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB34N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 190W
Qg Gate Charge: 62.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 28A
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 2700pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,140.00
USD
Quantity
Unit Price
1,000
$3.14
2,000+
$3.10
Product Variant Information section