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STMicroelectronics | STD6N60DM2

Manufacturer Part #

STD6N60DM2

MOSFET 600V 1.1 OHM FAST DIODE

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STD6N60DM2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1.1Ω
Rated Power Dissipation: 60W
Qg Gate Charge: 6.2nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 5A
Turn-on Delay Time: 9.2ns
Turn-off Delay Time: 12ns
Rise Time: 5.6ns
Fall Time: 19.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 274pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
100
Multiple Of:
10
Total
$58.00
USD
Quantity
Unit Price
10
$0.60
100
$0.58
300
$0.57
1,250
$0.555
3,000+
$0.53
Product Variant Information section