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Manufacturer Part #

STFW3N150

STFW3N150 Series 1500 V 9 Ohm 2.5 A N-Channel PowerMESH™ Power Mosfet - TO-3PF

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1500V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 63|W
Qg Gate Charge: 29.3nC
Package Style:  TO-3PF
Features & Applications

The STFW3N150 device Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Features:

  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • Fully isolated TO-3PF plastic package
  • Creepage distance path is 5.4 mm (typ.) for TO-3PF

Application:

  • Switching applications
Pricing Section
Stock:
0
Minimum Order:
600
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Total
$1,182.00
USD
Quantity
Web Price
30
$2.38
120
$2.05
450
$1.97
750
$1.94
1,500+
$1.90