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STMicroelectronics | STH180N10F3-2

Manufacturer Part #

STH180N10F3-2

N-Channel 100 V 4.5 mOhm Surface Mount STripFET™F3 Power Mosfet -H2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STH180N10F3-2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 315W
Qg Gate Charge: 114.6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 25.6ns
Turn-off Delay Time: 99.9ns
Rise Time: 97.1ns
Fall Time: 6.9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 6665pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,650.00
USD
Quantity
Unit Price
1
$2.91
10
$2.82
40
$2.77
150
$2.72
500+
$2.65
Product Variant Information section