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STMicroelectronics | STP11N60DM2

Manufacturer Part #

STP11N60DM2

N-Channel 600 V 0.420 Ohm Flange Mount MDmesh™ DM2 Power MOSFET - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP11N60DM2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 420mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 16.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 11.7ns
Turn-off Delay Time: 31ns
Rise Time: 6.3ns
Fall Time: 9.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 614pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$760.00
USD
Quantity
Unit Price
50
$0.76
2,000
$0.75
3,000
$0.745
4,000
$0.74
5,000+
$0.725
Product Variant Information section