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Manufacturer Part #
STP12NM50
N-Channel 550 V 0.35 Ω 28 nC Flange Mount MDmesh™ Power MosFet - TO-220
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) | ||||||||||
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STMicroelectronics STP12NM50 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STP12NM50&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/stp12nm50-stmicroelectronics-4059063
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STP12NM50&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/stp12nm50-stmicroelectronics-4059063
STMicroelectronics STP12NM50 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 350mΩ |
| Rated Power Dissipation: | 160|W |
| Qg Gate Charge: | 28nC |
| Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
The STPNM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features:
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications:
- Switching application
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
