
Manufacturer Part #
STP12NM50
N-Channel 550 V 0.35 Ω 28 nC Flange Mount MDmesh™ Power MosFet - TO-220
Product Specification Section
Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 500V |
Drain-Source On Resistance-Max: | 350mΩ |
Rated Power Dissipation: | 160|W |
Qg Gate Charge: | 28nC |
Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
The STPNM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features:
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications:
- Switching application
Pricing Section
Global Stock:
12,000
USA:
12,000
Factory Lead Time:
22 Weeks
Quantity
Web Price
1
$1.44
40
$1.29
150
$1.23
400
$1.20
1,500+
$1.15
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)