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Référence fabricant

STP12NM50

N-Channel 550 V 0.35 Ω 28 nC Flange Mount MDmesh™ Power MosFet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date: 2435
Product Specification Section
STMicroelectronics STP12NM50 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 350mΩ
Rated Power Dissipation: 160|W
Qg Gate Charge: 28nC
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The STPNM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Features:

  • High dv/dt and avalanche capabilities
  • Low input capacitance and gate charge
  • 100% avalanche tested
  • Low gate input resistance
  • Tight process control and high manufacturing yields

Applications:

  • Switching application
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
14 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
1 610,00 $
USD
Quantité
Prix unitaire
1
$1.68
40
$1.65
150
$1.63
500
$1.61
2 000+
$1.56
Product Variant Information section