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Manufacturer Part #

STP12NM50

N-Channel 550 V 0.35 Ω 28 nC Flange Mount MDmesh™ Power MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2038
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 350mΩ
Rated Power Dissipation: 160|W
Qg Gate Charge: 28nC
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The STPNM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Features:

  • High dv/dt and avalanche capabilities
  • Low input capacitance and gate charge
  • 100% avalanche tested
  • Low gate input resistance
  • Tight process control and high manufacturing yields

Applications:

  • Switching application
Pricing Section
Global Stock:
12,000
USA:
12,000
9,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
22 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1.44
USD
Quantity
Web Price
1
$1.44
40
$1.29
150
$1.23
400
$1.20
1,500+
$1.15
Product Variant Information section