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Manufacturer Part #
STP16N65M2
650 V 0.32 Ohm typ., 11 A N-Channel MDmesh M2 Power Mosfet - TO-220-3
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STP16N65M2 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STP16N65M2&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/stp16n65m2-stmicroelectronics-5055460
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STP16N65M2&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/stp16n65m2-stmicroelectronics-5055460
STMicroelectronics STP16N65M2 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 360mΩ |
| Rated Power Dissipation: | 110|W |
| Qg Gate Charge: | 19.5nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
14 Weeks
Quantity
Unit Price
50
$1.11
200
$1.08
750
$1.05
2,000
$1.03
5,000+
$1.00
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole