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STMicroelectronics | STP180N4F6

Manufacturer Part #

STP180N4F6

N-Channel 40 V 2.7 mOhm 190 W STripFET™ F6 Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP180N4F6 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.7mΩ
Rated Power Dissipation: 190|W
Qg Gate Charge: 130nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 24ns
Turn-off Delay Time: 106ns
Rise Time: 150ns
Fall Time: 57ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Height - Max: 9.15mm
Length: 10.4mm
Input Capacitance: 7735pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$825.00
USD
Quantity
Unit Price
50
$0.875
200
$0.85
1,000
$0.825
2,000
$0.815
6,250+
$0.785
Product Variant Information section