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STMicroelectronics | STP25N60M2-EP

Manufacturer Part #

STP25N60M2-EP

N-Channel 600 V 180 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP25N60M2-EP - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 188mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 18A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 61ns
Rise Time: 10ns
Fall Time: 16ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 1090pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,330.00
USD
Quantity
Unit Price
1,000
$1.33
3,000
$1.32
5,000+
$1.30
Product Variant Information section