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STMicroelectronics | STP33N65M2

Manufacturer Part #

STP33N65M2

N-Channel 650 V 140 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP33N65M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.14Ω
Rated Power Dissipation: 190W
Qg Gate Charge: 41.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 24A
Turn-on Delay Time: 13.5ns
Turn-off Delay Time: 72.5ns
Rise Time: 11.5ns
Fall Time: 9ns
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 1790pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,010.00
USD
Quantity
Unit Price
1
$2.11
30
$2.07
125
$2.04
400
$2.01
1,500+
$1.96
Product Variant Information section