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STMicroelectronics | STQ1HNK60R-AP

Manufacturer Part #

STQ1HNK60R-AP

STQ1HNK60R Series 600 V 400 mA 8.5 Ohm N-Channel SuperMESH™ Mosfet - TO-92-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STQ1HNK60R-AP - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 8.5Ω
Rated Power Dissipation: 3|W
Qg Gate Charge: 7nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 0.4A
Turn-on Delay Time: 6.5ns
Turn-off Delay Time: 19ns
Rise Time: 5ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Height - Max: 4.95mm
Length: 4.95mm
Package Style:  TO-92
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
4000
Multiple Of:
2000
Total
$1,020.00
USD
Quantity
Unit Price
2,000
$0.255
8,000
$0.25
30,000+
$0.245
Product Variant Information section