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Manufacturer Part #

STS10P3LLH6

P-Channel 30 V 12 mOhm Surface Mount STripFET H6 Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code: 1738
Product Specification Section
STMicroelectronics STS10P3LLH6 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 12mΩ
Rated Power Dissipation: 2.7W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12.5A
Turn-on Delay Time: 12.8ns
Turn-off Delay Time: 61ns
Rise Time: 112ns
Fall Time: 45ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.7V
Input Capacitance: 3350pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
20
USA:
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.59
USD
Quantity
Unit Price
1
$0.59
15
$0.555
75
$0.535
250
$0.52
1,250+
$0.495