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Manufacturer Part #

STS6P3LLH6

P-Channel 30 V 0.03 Ω 2.7 W SMT STripFET VI DeepGATE Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STS6P3LLH6 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 2.7|W
Qg Gate Charge: 12nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$687.50
USD
Quantity
Unit Price
2,500
$0.275
7,500
$0.27
25,000+
$0.265
Product Variant Information section