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Manufacturer Part #

STS9P2UH7

STS9P2UH7: 20 V 0.018 Ohm 9 A P-Channel STripFET™ VII DeepGATE™ Power Mosfet

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1452
Product Specification Section
STMicroelectronics STS9P2UH7 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 22.5mΩ
Rated Power Dissipation: 2.7|W
Qg Gate Charge: 22nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$787.50
USD
Quantity
Unit Price
2,500
$0.315
5,000
$0.31
7,500
$0.305
12,500+
$0.30
Product Variant Information section