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Manufacturer Part #

STY112N65M5

N-Channel 650 V 22 mOhm Through Hole MDmesh V Power MosFet - MAX-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1309
Product Specification Section
STMicroelectronics STY112N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 625|W
Qg Gate Charge: 350nC
Package Style:  MAX-247
Mounting Method: Flange Mount
Pricing Section
Global Stock:
4
USA:
4
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$28.37
USD
Quantity
Unit Price
1
$28.37
5
$28.00
25
$27.64
50
$27.48
150+
$27.02
Product Variant Information section