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Manufacturer Part #

IMBG120R008M2HXTMA1

CoolSiC Series 1200 V 189 A 7.7 mOhm Single N-Channel SiC MOSFET - TO-263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2347
Product Specification Section
Infineon IMBG120R008M2HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 189A
Input Capacitance: 6380pF
Power Dissipation: 800W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3
USA:
3
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$41.48
USD
Quantity
Web Price
1
$41.48
10
$38.73
40
$37.08
150
$35.50
500+
$34.06