Manufacturer Part #
IMBG120R008M2HXTMA1
CoolSiC Series 1200 V 189 A 7.7 mOhm Single N-Channel SiC MOSFET - TO-263-7
Product Specification Section
Infineon IMBG120R008M2HXTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IMBG120R008M2HXTMA1 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Product Status: | Active |
Fet Type: | N-Ch |
No. of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 189A |
Input Capacitance: | 6380pF |
Power Dissipation: | 800W |
Operating Temp Range: | -55°C to +175°C |
Package Style: | D2PAK-7 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
3
USA:
3
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Web Price
1
$41.48
10
$38.73
40
$37.08
150
$35.50
500+
$34.06
Product Variant Information section
Available Packaging
Package Qty:
1000 per
Package Style:
D2PAK-7
Mounting Method:
Surface Mount