text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMZA65R057M1HXKSA1

Infineon | IMZA65R057M1HXKSA1

Manufacturer Part #

IMZA65R057M1HXKSA1

IMZA Series N-Channel 650 V 35A 133W TH Silicon Carbide MOSFET TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMZA65R057M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 35A
Input Capacitance: 930pF
Power Dissipation: 133W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$948.00
USD
Quantity
Unit Price
30
$4.03
90
$3.98
150
$3.95
450
$3.89
750+
$3.84
Product Variant Information section