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STMicroelectronics | SCT025W120G3-4AG

Manufacturer Part #

SCT025W120G3-4AG

1200 V 56 A 37 mOhm Single N-Channel Silicon Carbide Power MOSFET - HiP247-4

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2503
Product Specification Section
STMicroelectronics SCT025W120G3-4AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 56A
Input Capacitance: 1990pF
Power Dissipation: 388W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
15
Germany:
15
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3
Multiple Of:
1
Total
$29.91
USD
Quantity
Unit Price
3
$9.97
15
$9.84
30
$9.79
100
$9.69
200+
$9.57
Product Variant Information section