Manufacturer Part #
24LC08 Series 8 Kb I2C 2 Wire (1K X 8) 2.5 V Serial EEPROM - PDIP-8
|Standard Pkg:|| |
Product Variant Information section
60 per Tube
Microchip has released a new Product Documents for the 24AA08/24LC08B/24FC08 8K I2C Serial EEPROM Data Sheet of devices.Description of Change: Replaced terminology Master and Slave with Host and Client respectively. Changed MUY with Q4B part number for UDFN package. Updated TSSOP and UDFN package drawings. Added Automotive Product Identification System. Reason for Change: To Improve Productivity Date Document Changes Effective: 17 Mar 2021NOTE: Please be advised that this is a change to the document only the product has not been changed.
Description of Change:Qualification of G600V as an additional/alternative mold compound material for selected products available in 40L, 8L,14L, 16L, 18L, 20L, 28L PDIP and 28L SPDIP packages at MMT assembly site using palladium coated copper wire with gold flash (CuPdAu) bond wire.Pre Change:Using GE800 mold compound material.Post Change:Using GE800 or G600V mold compound material.Reason for Change:To improve on time delivery performance by qualifying G600V as an addition/alternative mold compound material for selected PDIP and SPDIP packages at MMT assembly site. Because of factory shutdowns due to the COVID-19 pandemic, we must quickly implement this change or risk not having material to ship.Estimated First Ship Date:April 30, 2020 (date code: 2018)
Notification subject: Memo # ML01202000QB: Final Notice: Qualification of 36.3K process technology for selected Microchip products of the 24xx08 and 24xx16 device families.PCN Status: Final notificationPCN Type: Manufacturing ChangeDescription of Change: Qualification of 36.3K process technology for selected Microchip products of the 24xx08 and 24xx16device families.Pre Change: Available in 160K wafer technology fabricated at Microchip fabrication sites FAB2 and FAB4 (Tempe, AZ and Gresham, OR, USA) using 8 inch wafersPost Change: Available in 160K wafer technology fabricated at Microchip fabrication sites FAB2 and FAB4 (Tempe, AZ and Gresham, OR, USA) using 8 inch wafers or available in 36.3K wafer technology fabricated at FAB 5 (Colorado Springs, CO, USA) using 6 inch wafers.Impacts to Data Sheet: NoneChange Impact: NoneReason for Change: To improve manufacturability by qualifying an additional fabrication site.Change Implementation Status: In ProgressEstimated First Ship Date: April 15, 2020 (date code: 2016)NOTE: Please be advised that after the estimated first ship date customers may receive pre and post change parts
Microchip has released a new Product Documents for the 24AA08/24LC08B/24FC08 Data Sheet of devices.Description of Change:1) Added the 24FC08 device2) Updated Package Drawings; Updated formating throughout for clarification.Reason for Change: To Improve ManufacturabilityDate Document Changes Effective: 13 December 2019NOTE: Please be advised that this is a change to the document only the product has not been changed.
|Memory Organization:||4 x 256 x 8|
|Supply Voltage-Nom:||2.5V to 5.5V|
|Write Cycle Time-Max (tWC):||5ms|
|Mounting Method:||Through Hole|
Features & Applications
The 24LC08B (24XX08*) series of 8 Kbit Electrically Erasable PROM is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7 V, with standby and active currents of only 1 μA and 1 mA, respectively.
The 24XX08 also has a page write capability for up to 16 bytes of data. The 24XX08 is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, 2x3 DFN, 2x3 TDFN and MSOP packages, and is also available in the 5-lead SOT-23 package. All packages are Pb-free and RoHS compliant.
- Single Supply with Operation Down to 2.5 V
- Low-Power CMOS Technology:
- 2-Wire Serial Interface, I2C™ Compatible
- Schmitt Trigger inputs for Noise Suppression
- Output Slope Control to eliminate Ground Bounce
- 100 kHz and 400 kHz Clock Compatibility
- Page Write Time 3 ms, typical
- Self-Timed Erase/Write Cycle
- 16-Byte Page Write Buffer
- Hardware Write-Protect
- ESD Protection >4,000 V
- More than 1 Million Erase/Write Cycles
- Data Retention >200 years
60 per Tube