Manufacturer Part #
FM24W Series 64 Kb (8 K x 8) 2.7 - 5.5 V 3 us Serial F-RAM Memory - SOIC-8
|Standard Pkg:|| |
Product Variant Information section
97 per Tube
Cypress FM24W256-G - Product Specification
Description of Change: This notification is to inform customers that Cypress will be standardizing its Full Box Quantity to a sellable quantity in the market where it will be able to round the orders in increment of this full box quantity. It may be recalled that Cypress had implemented Manufacturing Label and Packing Configuration Standardization via Product Information Notification PIN195102 in December 2019. As part of the Cypress integration into Infineon Shipping Standard, Cypress will be adjusting Minimum Order Quantity (MOQ), Order Increment (OI) to align them with new Full Box Quantity for select parts shipped in trays and tubes.
Addendum to PIN195102 - Manufacturing Label and Packing Configuration Standardization Description of Change: The purpose of this addendum is to correct the date from January 20, 2019 to January 20, 2020, in the "3rd paragraph in the 'Description of Change' section. This notification is to inform customers that Cypress will be standardizing its manufacturing labels and tray/tube packing configuration. It may be recalled that the Cypress entity consolidation (following the merger with Spansion Corp) was announced via Product Information Notification PIN174801 in November 2017. As the next phase of the entity consolidation process, Cypress will be adapting a new manufacturing label format for all products and revising shipping configurations for select product shipped in trays and tubes.
Cypress FM24W256-G - Technical Attributes
|FRAM Type:||Non Volatile|
|Memory Organization:||32 K x 8|
|Supply Voltage-Nom:||2.7V to 5.5V|
|Temperature Range:||-40°C to +85°C|
|Mounting Method:||Surface Mount|
$Features & Applications
The FM24W256-G is a part of FM24W series F-RAM. It has an operating temperature ranging from -40°C to +85°C and its available in SOIC-8 package.
The FM24W256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM.
- 256K bit Ferroelectric Nonvolatile RAM:
- Organized as 32,768 x 8 bits
- High Endurance 100 Trillion (1014) Read/Writes
- 38 year Data Retention (@ +75ºC)
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process
- Fast Two-wire Serial Interface:
- Up to 1 MHz maximum bus frequency
- Direct hardware replacement for EEPROM
- Supports legacy timing for 100 kHz & 400 kHz
- Low Power Operation:
- Wide Voltage Operation 2.7 V-5.5 V
- 100 µA Active Current (100 kHz)
- 15 µA Standby Current (typ.)
97 per Tube