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Référence fabricant
MR4A16BCMA35
MR4A16B Series 1 M x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - BGA-48
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| Nom du fabricant: | Everspin Technologies | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :240 par Tray Style d'emballage :BGA-48 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2514 | ||||||||||
Everspin Technologies MR4A16BCMA35 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=MR4A16BCMA35&field4=Everspin Technologies&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--memory--RAM--nvram--mram/mr4a16bcma35-everspin-technologies-7002866
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=MR4A16BCMA35&field4=Everspin Technologies&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--memory--RAM--nvram--mram/mr4a16bcma35-everspin-technologies-7002866
Everspin Technologies MR4A16BCMA35 - Caractéristiques techniques
| Memory Density: | 16Mb |
| Interface Type: | Parallel |
| Memory Organization: | 1 M x 16 |
| Supply Voltage-Nom: | 3V to 3.6V |
| Access Time-Max: | 35ns |
| Temperature Range: | -40°C to +85°C |
| Style d'emballage : | BGA-48 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The MR4A16BCMA35 is a magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. It is available in a small footprint 48-pin ball grid array (BGA) package.
This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. Datais always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Features:
- +3.3 Volt power supply
- Fast 35 ns read/write cycle
- SRAM compatible timing
- Unlimited read & write endurance
- Data always non-volatile for >20 years at temperature
- RoHS-compliant small footprint BGA and TSOP2 package
- AEC-Q100 Grade 1 option in TSOP2 package
Benefits:
- One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
- Improves reliability by replacing battery-backed SRAM
View the available MR4A16B series of MRAMs
Emballages disponibles
Qté d'emballage(s) :
240 par Tray
Style d'emballage :
BGA-48
Méthode de montage :
Surface Mount