Manufacturer Part #
MR4A16BCMA35
MR4A16B Series 1 M x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - BGA-48
|
|
|||||||||||
|
|
|||||||||||
| Mfr. Name: | Everspin Technologies | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:240 per Tray Package Style:BGA-48 Mounting Method:Surface Mount |
||||||||||
| Date Code: | 2514 | ||||||||||
Everspin Technologies MR4A16BCMA35 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Part Status:
Everspin Technologies MR4A16BCMA35 - Technical Attributes
| Memory Density: | 16Mb |
| Interface Type: | Parallel |
| Memory Organization: | 1 M x 16 |
| Supply Voltage-Nom: | 3V to 3.6V |
| Access Time-Max: | 35ns |
| Temperature Range: | -40°C to +85°C |
| Package Style: | BGA-48 |
| Mounting Method: | Surface Mount |
Features & Applications
The MR4A16BCMA35 is a magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. It is available in a small footprint 48-pin ball grid array (BGA) package.
This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. Datais always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Features:
- +3.3 Volt power supply
- Fast 35 ns read/write cycle
- SRAM compatible timing
- Unlimited read & write endurance
- Data always non-volatile for >20 years at temperature
- RoHS-compliant small footprint BGA and TSOP2 package
- AEC-Q100 Grade 1 option in TSOP2 package
Benefits:
- One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
- Improves reliability by replacing battery-backed SRAM
View the available MR4A16B series of MRAMs
Available Packaging
Package Qty:
240 per Tray
Package Style:
BGA-48
Mounting Method:
Surface Mount