
Manufacturer Part #
71V416S10PHGI
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II
Renesas 71V416S10PHGI - Product Specification
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Subject: Add Alternate Assembly Location and Change Material Sets on TSOP-44Revision Description:Initial ReleaseDescription of Change:Renesas is adding Greatek, Taiwan as an alternate assembly location for TSOP-44 package. Presently, Greatek is the qualified assembly location for Renesas. The current assembly location for the impacted package is at OSET, Taiwan. The material sets of the current and the alternate assembly location are as shown in the below table. There will be changes in the material sets at the alternate location.In addition, the material sets namely die attach and mold compound used at the current assembly OSET will be changed to new materials as shown in the below table as a result of OSET standardize the materials used on all TSOP-44 package.There will be no changes in moisture sensitive level resulted from the above mentioned two changes.Impact on Fit, Form, Function, Quality & Reliability: The change will have no impact on the form, fit, function, quality, reliability and environmental compliance of the products.
Part Status:
Renesas 71V416S10PHGI - Technical Attributes
Memory Density: | 4Mb |
Memory Organization: | 256 K x 16 |
Supply Voltage-Nom: | 3V to 3.6V |
Access Time-Max: | 10ns |
Temperature Grade: | Industrial |
Operating Temperature: | 40°C to 85°C |
Storage Temperature Range: | -55°C to +125°C |
Interface Type: | Parallel |
Package Style: | TSOP-44 |
Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
135 per Tube
Package Style:
TSOP-44
Mounting Method:
Surface Mount