H11G2M in Tube by onsemi | Isolation Components / Optocouplers | Future Electronics
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onsemi | H11G2M

Manufacturer Part #

H11G2M

DIP6 Through Hole Single Channel 80 V 4170 VAC Photo Darlington Optocoupler

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi H11G2M - Technical Attributes
Attributes Table
No of Channels: 1
Isolation Voltage-RMS: 4170V
Output Voltage-Max: 80V
CTR-Min: 1000%
Operating Temp-Max: 100°C
Package Style:  DIP-6
Mounting Method: Through Hole
Features & Applications

The H11G2M is a photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Features:

  • High BV CEO– Minimum 100V for H11G1M– Minimum 80V for H11G2M– Minimum 55V for H11G3M
  • High sensitivity to low input current (Min. 500% CTR at IF = 1mA)
  • Low leakage current at elevated temperature (Max. 100µA at 80°C)
  • Underwriters Laboratory (UL) recognized File # E90700, Volume 2

Applications:

  • CMOS logic interface
  • Telephone ring detector
  • Low input TTL interface
  • Power supply isolation
  • Replace pulse transformer
Read More...
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
2350
Multiple Of:
50
Total
$564.00
USD
Quantity
Unit Price
1
$0.255
150
$0.25
500
$0.245
1,500
$0.24
5,000+
$0.23
Product Variant Information section