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Référence fabricant

H11G2M

DIP6 Through Hole Single Channel 80 V 4170 VAC Photo Darlington Optocoupler

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date:
Product Specification Section
onsemi H11G2M - Caractéristiques techniques
Attributes Table
No of Channels: 1
Isolation Voltage-RMS: 4170V
Output Voltage-Max: 80V
CTR-Min: 1000%
Operating Temp-Max: 100°C
Style d'emballage :  DIP-6
Méthode de montage : Through Hole
Fonctionnalités et applications

The H11G2M is a photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Features:

  • High BV CEO– Minimum 100V for H11G1M– Minimum 80V for H11G2M– Minimum 55V for H11G3M
  • High sensitivity to low input current (Min. 500% CTR at IF = 1mA)
  • Low leakage current at elevated temperature (Max. 100µA at 80°C)
  • Underwriters Laboratory (UL) recognized File # E90700, Volume 2

Applications:

  • CMOS logic interface
  • Telephone ring detector
  • Low input TTL interface
  • Power supply isolation
  • Replace pulse transformer
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
10 Semaines
Commande minimale :
3000
Multiples de :
1000
Total 
690,00 $
USD
Quantité
Prix unitaire
1
$0.245
150
$0.24
500
$0.235
2 000
$0.23
7 500+
$0.22