onsemi NCP51705 Silicon Carbide MOSFET Driver
Providing a wide choice of optimized gate voltage outputs
onsemi's NCP51705 Silicon Carbide (SiC) MOSFET driver is part of a series of gate drivers which are suitable for circuits based on Silicon Carbide (SiC) MOSFET power switches. Many can also be used to drive silicon IGBTs.
These gate drivers provide an optimized gate-drive voltage and feature low rise and fall times to support the fast-switching characteristics of SiC MOSFETs.
The onsemi series includes the NCP51705, a driver primarily intended for driving SiC MOSFETs. To achieve the lowest possible conduction losses, the NCP51705 driver is tuned to supply the maximum allowable gate voltage to the SiC MOSFET. By providing a high peak current during turn-on and turn-off, the NCP51705 keeps switching losses to a minimum.
For improved reliability, high dV/dt immunity and even faster turn-off, the NCP51705 SiC MOSFET driver can use its on-board charge pump to generate a user-selectable negative voltage rail. In isolated applications, the NCP51705 also provides an externally accessible 5V rail to power the secondary side of a digital or high-speed optocoupler. An AEC-Q100 qualified option, the NCV51705, is also available.
Parts Available for Immediate Sampling
Evaluation Board – NCP51705SMDGEVB
The NCP51705 SiC driver SMD evaluation board is suitable for existing or new PCB designs. The EVB is designed on a four layer PCB and includes the NCP51705 driver and all the necessary drive circuitry. The EVB also includes an on−board digital isolator and the ability to solder any MOSFET or SiC MOSFET in a TO−247 high voltage package. It can be used in any low-side or high-side power switching application.
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Overview of WBG and SiC Capabilities