ON Semiconductor 650V Silicon Carbide (SiC) Schottky Diodes
Offering higher efficiency and lower system costs
ON Semiconductor has extended its Silicon Carbide (SiC) diode portfolio with a new family of 650V Silicon Carbide (SiC) Schottky diodes which provide excellent fast-switching performance and high efficiency in Power Factor Correction (PFC) circuits and boost converters.
The Schottky diodes' cutting-edge Silicon Carbide (SiC) technology provides substantially better operating characteristics than an equivalent silicon-based diode offers. The 650V SiC diodes’ key features, such as zero reverse-recovery charge, low forward voltage, temperature-independent current stability, high surge capacity and positive temperature coefficient, result in superior switching operation with lower power losses, and support effortless paralleling of devices.
The reduction in power losses observed in ON Semiconductors’ 650V SiC diodes is due to the inherently low forward voltage as well as their zero reverse-recovery charge, giving improved efficiency in converter circuits. In addition, the faster reverse recovery of SiC diodes allows for higher switching speeds. This reduces the size of the system’s magnetics and other passive components, enabling engineers to realize designs which have higher power density, a smaller volume and lower total bill-of-materials cost.
ON Semiconductor's SiC Schottky diodes feature a unique, patented termination structure which gives reliable operation and enhances stability and ruggedness. Additionally, the diodes offer the industry's highest unclamped inductive switching capability and lowest leakage currents.
The 650V SiC diodes are offered in surface-mount DPAK and through-hole TO-220 and TO-247 packages.
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SiC Diode Features
SiC Diode Applications
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Overview of WBG and SiC Capabilities