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onsemi | FDB28N30TM

Manufacturer Part #

FDB28N30TM

N-Channel 300 V 0.129 Ohm Surface Mount UniFET Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDB28N30TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 300V
Drain-Source On Resistance-Max: 0.129Ω
Rated Power Dissipation: 250|W
Qg Gate Charge: 50nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FDB28N30TM is a FDB28N30 Series 300 V 0.129 Ω N-Channel Mosfet available in - D2PAK-3 Surface Mount package. These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology

Product Fatures :

  • RDS(on) = 0.108 Ω ( Typ.)@ VGS = 10 V, ID = 14 A
  • Low gate charge ( Typ. 39nC)
  • Low Crss ( Typ. 35 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications:

  • High efficient S.M.P.S
  • Active power factor correction
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
1,404
Factory Lead Time:
8 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$832.00
USD
Quantity
Unit Price
800
$1.04
1,600
$1.03
3,200
$1.02
4,000+
$1.01
Product Variant Information section