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Manufacturer Part #

IRFF120

Single N-Channel 100 V 20 W 18 nC Hexfet Power Mosfet Through Hole - TO-39-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFF120 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.3Ω
Rated Power Dissipation: 20|W
Qg Gate Charge: 18nC
Package Style:  TO-39
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
300
Multiple Of:
100
Total
$5,400.00
USD
Quantity
Unit Price
1
$18.90
4
$18.65
15
$18.41
30
$18.29
75+
$18.00
Product Variant Information section