Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
IXTQ100N25P
N-Channel 250 V 27 mOhm 600 W Flange Mount PolarHT Power Mosfet - TO-3P
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Littelfuse - IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-3P Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Littelfuse - IXYS IXTQ100N25P - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXTQ100N25P&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/ixtq100n25p-littelfuse-ixys-6838726
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXTQ100N25P&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/ixtq100n25p-littelfuse-ixys-6838726
Littelfuse - IXYS IXTQ100N25P - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 250V |
| Drain-Source On Resistance-Max: | 27mΩ |
| Rated Power Dissipation: | 600W |
| Qg Gate Charge: | 185nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 25ns |
| Turn-off Delay Time: | 100ns |
| Rise Time: | 26ns |
| Fall Time: | 28ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 6300pF |
| Style d'emballage : | TO-3P |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
IXYS is a state of the art leader in MOSFET technology through the IXTQ series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXTQ100N25P (this part is lead free) has the capacity to operate at 250 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = .027 Ohms). Avalanche rated, the IXTQ100N25P is able to reduce power dissipation levels to approximately 600 watts. The IXTQ100N25P provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-3P package format.
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-3P
Méthode de montage :
Through Hole