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Manufacturer Part #
SIHA22N60E-E3
MOSFET 650V .18OHM@10V MOSFET
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-220FP (TO-220FPAB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Vishay SIHA22N60E-E3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHA22N60E-E3&field4=Vishay&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/siha22n60e-e3-vishay-4061405
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHA22N60E-E3&field4=Vishay&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/siha22n60e-e3-vishay-4061405
Vishay SIHA22N60E-E3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 180mΩ |
| Rated Power Dissipation: | 35|W |
| Qg Gate Charge: | 57nC |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-220FP (TO-220FPAB)
Mounting Method:
Through Hole