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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. AIMBG120R010M1XTMA1

Infineon | AIMBG120R010M1XTMA1

Manufacturer Part #

AIMBG120R010M1XTMA1

N-Channel 1200 V 205 A Surface Mount Silicon Carbide MOSFET - PG-TO-263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon AIMBG120R010M1XTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 205A
Input Capacitance: 5703pF
Power Dissipation: 882W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$28,880.00
USD
Quantity
Unit Price
1,000+
$28.88
Product Variant Information section