Infineon 1ED301xMC12I Single-Channel Gate Driver IC
High-speed, reinforced-isolation gate drivers for high-voltage power switching
The Infineon IED301x EiceDRIVER™ family consists of single-channel isolated gate driver ICs engineered for high-voltage power conversion systems requiring fast switching, strong noise immunity, and compact design. Designed as opto-compatible replacements, these drivers use Infineon’s coreless transformer isolation technology to deliver reinforced isolation while eliminating the aging and performance limitations associated with optocouplers.
All devices in the IED301x family support functional offset voltages up to 2300 V and provide strong gate drive capability with 6.5 A sink and 6 A source peak output current. Best-in-class propagation delay of 40 ns, low part-to-part skew, and extremely high common-mode transient immunity (CMTI > 300 kV/µs) enable precise, reliable switching in demanding environments.
Packaged in a compact wide-body LDSO package with 8 mm creepage and CTI 600 rating, the IED301x family is pin-to-pin compatible with opto-based gate drivers already on the market. Variants are optimized for silicon MOSFETs, IGBTs, or SiC MOSFETs through device-specific undervoltage lockout (UVLO) thresholds, allowing designers to select the best fit for their power topology without redesigning the PCB.
Featured Devices
The 1ED3010MC12I is a 2300 V single-channel isolated gate driver optimized for silicon MOSFET applications. It provides reinforced isolation, fast switching performance, and UVLO thresholds suited for Si-based designs, making it ideal for high-voltage industrial and energy systems.
The 1ED3011MC12I targets IGBT-based power stages, offering reinforced isolation up to 5.7 kV (rms) and UVLO levels optimized for IGBT gate requirements. Its opto-emulator input and high drive strength enable efficient and reliable operation in high-power conversion systems.
Designed for wide-bandgap power devices, the 1ED3012MC12I supports SiC MOSFET switching with higher UVLO thresholds to meet SiC gate drive requirements. Its high CMTI and fast propagation delay make it well-suited for high-speed, high-efficiency power designs.
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