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Manufacturer Part #

STB120N4F6

N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB120N4F6 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 4mΩ
Rated Power Dissipation: 110|W
Qg Gate Charge: 65nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB120N4F6 is a product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Features:

  • Standard threshold drive
  • 100% avalanche tested

Application:

  • Switching applications
  • Automotive
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,830.00
USD
Quantity
Unit Price
50
$0.93
2,000
$0.915
3,000
$0.91
4,000
$0.905
5,000+
$0.89
Product Variant Information section