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Référence fabricant
APT50GN60BDQ2G
APT50GN60Bx Series 600 V 107 A Trench and Field Stop IGBT - TO-247-3
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Microchip APT50GN60BDQ2G - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Qualification of Tin (Sn) as a new terminal plating for selected APL502, APL602, APT100, APT10M, APT11N, APT120, APT13G, APT150, APT15D, APT15G, APT200, APT20G, APT20M, APT25G, APT30D, APT30G, APT30M, APT30S, APT33G, APT35G, APT401, APT40D, APT40G, APT40M, APT45G, APT47N, APT501, APT502, APT50G, APT50M, APT601, APT602, APT603, APT60D, APT60M, APT60S, APT65G, APT75G, APT801, APT802, APT803, APT804, APT805, APT806, APT807, APT80G, APT94N, CC1105, CC1215, CC2515, CC3037, CC3038, CC3069 and CC3125 Microsemi Power Discrete TO-247 products.Reason for Change: To improve productivity by a change in terminal platingEstimated First Ship Date: 02 January 2026 (date code: 2601)
PCN Status:Final NotificationDescription of Change:Qualification of MG15F-35AB and MG15F-0140B as a new mold compound material for various products available in TO-264, SOT-227 and TO-247 packages at FSTS assembly site.Reason for Change:To improve productivity by qualifying MG15F-35AB and MG15F-0140B as a new mold compound.Change Implementation Status:In ProgressEstimated First Ship Date:June 29, 2024 (date code: 2426)
PCN Status:Initial NotificationDescription of Change:Qualification of MG15F-35AB and MG15F-0140B as a new mold compound material for various products available in TO-264, SOT-227 and TO-247 packages at FSTS assembly site.Reason for Change:To improve productivity by qualifying MG15F-35AB and MG15F-0140B as a new mold compound material at FSTS assembly site.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT50GN60BDQ2G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--igbts/apt50gn60bdq2g-microchip-3034613
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- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT50GN60BDQ2G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--igbts/apt50gn60bdq2g-microchip-3034613
Microchip APT50GN60BDQ2G - Caractéristiques techniques
| CE Voltage-Max: | 600V |
| Collector Current @ 25C: | 107A |
| Power Dissipation-Tot: | 366W |
| Gate - Emitter Voltage: | 30V |
| Pulsed Collector Current: | 150A |
| Turn-on Delay Time: | 20ns |
| Turn-off Delay Time: | 230ns |
| Qg Gate Charge: | 325nC |
| Reverse Recovery Time-Max: | 25ns |
| Leakage Current: | 600nA |
| Input Capacitance: | 3200pF |
| Thermal Resistance: | 0.41°C/W |
| Operating Temp Range: | -55°C to +175°C |
| No of Terminals: | 3 |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole