Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
IRF4905PBF
Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) | ||||||||||
| Code de date: | 2223 | ||||||||||
Infineon IRF4905PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
- Updated information marked in BLUE TYPE- Original PCN N? 2023-092-A dated 2023-01-15 (new: 2024-01-15) Product identification Traceability is assured via Wafer lot number & country of diffusion Country of diffusion: ? United States = Infineon Technologies Temecula? Taiwan = EPISIL Technologies Inc.? Malaysia = Infineon Technologies Kulim
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF4905PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irf4905pbf-infineon-6173863
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF4905PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irf4905pbf-infineon-6173863
Infineon IRF4905PBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.02Ω |
| Rated Power Dissipation: | 200W |
| Qg Gate Charge: | 180nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 74A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 61ns |
| Rise Time: | 99ns |
| Fall Time: | 96ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 8.77mm |
| Length: | 10.54mm |
| Input Capacitance: | 3400pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)