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Infineon | IRF7351TRPBF

Manufacturer Part #

IRF7351TRPBF

Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2401
Product Specification Section
Infineon IRF7351TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 17.8mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 5.1ns
Turn-off Delay Time: 17ns
Rise Time: 5.9ns
Fall Time: 6.7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 1330pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
32,000
USA:
32,000
On Order:Order inventroy details
8,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,520.00
USD
Quantity
Unit Price
4,000
$0.38
8,000
$0.375
12,000
$0.37
20,000+
$0.365
Product Variant Information section