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Référence fabricant
IRFP4668PBF
Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :25 par Tube Style d'emballage :TO-247AC Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Infineon IRFP4668PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFP4668PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irfp4668pbf-infineon-6173909
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFP4668PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irfp4668pbf-infineon-6173909
Infineon IRFP4668PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 9.7mΩ |
| Rated Power Dissipation: | 520W |
| Qg Gate Charge: | 161nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 130A |
| Turn-on Delay Time: | 41ns |
| Turn-off Delay Time: | 64ns |
| Rise Time: | 105ns |
| Fall Time: | 74ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 10720pF |
| Style d'emballage : | TO-247AC |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
International Rectifier is a world leader in power management technology.
IR has announced a new range of trench HEXFET PowerMOSFETs featuring benchmark low on-state resistance RDS(on) in a TO-247 package for synchronous rectification, active ORing and industrial applications including high power DC motors, DC to AC inverters and power tools.
The IRFP4668PBF features an improvement of up to 50 percent in RDS(on) over competing devices, eliminating the need for large and expensive packages typically used in industrial applications, and cutting overall system cost. Moreover, the low RDS(on) results in lower conduction losses and improved system efficiency.
The IRFP4668PBF is an N-Channel, 200V MOSFET, with a current rating of 130 Amps. It is constructed in a TO-247 package and provides a max RDS(on) rating of 9.7 Mohm. The device is qualified to industrial grade and moisture sensitivity level 1 (MSL1). The IRFP4668PBF is in offered lead free and are RoHS compliant.
Emballages disponibles
Qté d'emballage(s) :
25 par Tube
Style d'emballage :
TO-247AC
Méthode de montage :
Through Hole