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STMicroelectronics | STD6N62K3

Manufacturer Part #

STD6N62K3

N-Channel 620 V 1.2 Ohm Surface Mount SuperMESH3™ Power MosFet - TO-252

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD6N62K3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 620V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 90W
Qg Gate Charge: 34nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 5.5A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 49ns
Rise Time: 12ns
Fall Time: 20ns
Gate Source Threshold: 3.75V
Input Capacitance: 875pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,200.00
USD
Quantity
Unit Price
2,500
$0.88
5,000
$0.865
7,500+
$0.855
Product Variant Information section