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Référence fabricant

STP42N65M5

N-Channel 650 V 79 mΩ 100 nC Flange Mount MDmesh™ V Power MosFet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP42N65M5 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 79mΩ
Rated Power Dissipation: 190|W
Qg Gate Charge: 100nC
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Flange Mount
Fonctionnalités et applications

The STP42N65M5 is a MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies.

Features:

  • TO-220 worldwide best RDS(on)
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Switching applications

View the Complete family of STP4 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
14 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
5 590,00 $
USD
Quantité
Prix unitaire
1
$5.84
15
$5.77
50
$5.72
150
$5.68
500+
$5.59
Product Variant Information section