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Manufacturer Part #

STP42N65M5

N-Channel 650 V 79 mΩ 100 nC Flange Mount MDmesh™ V Power MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP42N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 79mΩ
Rated Power Dissipation: 190|W
Qg Gate Charge: 100nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The STP42N65M5 is a MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies.

Features:

  • TO-220 worldwide best RDS(on)
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$5,800.00
USD
Quantity
Unit Price
1
$6.06
15
$5.98
50
$5.93
150
$5.89
500+
$5.80
Product Variant Information section