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onsemi | FDP18N50

Manufacturer Part #

FDP18N50

N-Channel 500 V 265 mOhm Flange Mount Mosfet - TO-220

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2524
Product Specification Section
onsemi FDP18N50 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 265mΩ
Rated Power Dissipation: 235|W
Qg Gate Charge: 60nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FDP18N50 N-Channel enhancement mode power field effect transistors are produced using DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features:

  • 18 A, 500 V, RDS(on) = 0.265 ? @VGS = 10 V
  • Low gate charge ( typical 45 nC)
  • Low Crss ( typical 25 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,480.00
USD
Quantity
Unit Price
1,000
$1.48
2,000
$1.47
4,000
$1.46
5,000+
$1.45
Product Variant Information section