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  6. TP65H030G4PWS

Renesas | TP65H030G4PWS

Manufacturer Part #

TP65H030G4PWS

650 V 55.7 A 41mOhm Through Hole SuperGaN® GaN FET - TO-247
ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
Date Code: 2513
Product Specification Section
Renesas TP65H030G4PWS - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 55.7A
Qg Gate Charge: 24.5nC
Drain-to-Source Voltage [Vdss]: 650V
Gate-Source Voltage-Max [Vgss]: 20V
Input Capacitance: 1500pF
Rated Power Dissipation: 192W
Operating Temp Range: -40°C to +150°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
960
Multiple Of:
240
Total
$5,193.60
USD
Quantity
Unit Price
240
$5.45
480
$5.43
720
$5.42
960
$5.41
1,200+
$5.38
Product Variant Information section